MIL-M-38510-370 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, Nand Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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Test

Symbol

Conditions

-55°C ≤ TC  ≤ +125°C

unless otherwise specified

Device type

Limits

Unit

Min

Max

High level output voltage

VOH

VCC  = 4.5 V, VIL  = 0.8 V, IOH  = -400 µA

All

2.5

V

Low level output voltage

VOL

VCC  = 4.5 V, IOL  = 4 mA, VIH  = 2.0 V

All

0.4

V

Input clamp voltage

VI C

VCC  = 4.5 V, IIN  = -18 mA, TC  = +25°C

All

-1.5

V

High level input current

IIH1

VCC  = 5.5 V, VIH  = 2.7 V

All

20

µA

IIH2

VCC  = 5.5 V, VIH  = 7.0 V

All

100

µA

Low level input current

IIL

VCC  = 5.5 V, VIN  = 0.4 V

All

0

-400

µA

Output current   1/

IO

VCC  = 5.5 V, VO  = 2.25 V

01, 03,

06

-15

-110

mA

02, 04,

05

-20

-112

High level supply current

ICCH

VCC  = 5.5 V, VIN  = 0 V

01

0.85

mA

02

0.6

03

0.4

04

0.36

05

0.34

06

1.1

Low level supply current

ICCL

VCC  = 5.5 V, VIN  = 4.5 V

01

3.0

mA

02

2.2

03

1.5

04

0.9

05

0.8

06

4.2