MIL-M-38510-370 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, Nand Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/370A

NOTES:

1. Input pulse has the following characteristics:

t1 = t0 = 6 ±1.5 ns, PRR � 1.0 MHz, ZOUT ≅ 50n.

2. Inputs not under test are at 2.7 V.

3. CL = 50 pF ±10%, including scope probe, wiring and stray capacitance without package in test fixture.

4. RL = 499n ±1%.

5. Voltage measurements are to be made with respect to network ground terminal.

FIGURE 3. Switching time test circuit and waveforms for device types 01 through 06.