MIL-M-38510-300 Microcircuits, Digital, Bipolar, Low-Power Schottky, Ttl,And Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low power, Schottky, TTL, positive NAND logic gate microcircuits.

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Subgroup

Symbol

MIL-STD-

883 method

Cases

A,B,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Unit

Case 11

X and 2

2

3

4

6

8

9

10

12

13

14

16

18

19

20

Test no.

A

B

C

D

E

F

GND

y

NC

NC

G

H

NC

VCC

Min

Max

1

Tc = 25°C

VOH

3006

" " " " " " "

1

0.7 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

GND

-400 ∝A

5.5 V

5.5 V

4.5 V

y

2.5 V

V

2

5.5 V

0.7 V

5.5 V

"

"

"

"

"

"

"

"

"

"

"

3

"

5.5 V

0.7 V

"

"

"

"

"

"

"

"

"

"

"

4

"

"

5.5 V

0.7 V

"

"

"

"

"

"

"

"

"

"

5

"

"

5.5 V

0.7 V

"

"

"

"

"

"

"

"

"

6

"

"

"

5.5 V

0.7 V

"

"

"

"

"

"

"

"

7

"

"

"

"

5.5 V

"

"

0.7 V

"

"

"

"

"

8

"

"

"

"

5.5 V

"

"

5.5 V

0.7 V

"

"

"

"

VOL

3007

9

2.0 V

2.0 V

2.0 V

2.0 V

2.0 V

2.0 V

"

4 mA

2.0 V

2.0 V

"

"

0.4

"

VIC

10

-18 mA

"

"

A

-1.5

"

11

-18 mA

"

"

B

"

"

12

-18 mA

"

"

C

"

"

13

-18 mA

"

"

D

"

"

14

-18 mA

"

"

E

"

"

15

-18 mA

"

"

F

"

"

16

"

-18 mA

"

G

"

"

17

"

-18 mA

"

H

"

"

IIH1

3010

" " " " " " "

18

2.7 V

GND

GND

GND

GND

GND

"

GND

GND

5.5 V

A

20

∝A

19

GND

2.7 V

GND

"

"

"

"

"

"

"

B

"

"

20

"

GND

2.7 V

"

"

"

"

"

"

"

C

"

"

21

"

"

GND

2.7 V

"

"

"

"

"

"

D

"

"

22

"

"

"

GND

2.7 V

"

"

"

"

"

E

"

"

23

"

"

"

"

GND

2.7 V

"

"

"

"

F

"

"

24

"

"

"

"

"

GND

"

2.7 V

"

"

G

"

"

25

"

"

"

"

"

"

"

GND

2.7 V

"

H

"

"

IIH2

"

" " " " " " "

26

5.5 V

"

"

"

"

"

"

"

GND

"

A

100

"

27

GND

5.5 V

"

"

"

"

"

"

"

"

B

"

"

28

"

GND

5.5 V

"

"

"

"

"

"

"

C

"

"

29

"

"

GND

5.5 V

"

"

"

"

"

"

D

"

"

30

"

"

GND

5.5 V

"

"

"

"

"

E

"

"

31

"

"

"

GND

5.5 V

"

"

"

"

F

"

"

32

"

"

"

"

GND

"

5.5 V

"

"

G

"

"

33

"

"

"

"

GND

"

GND

5.5 V

"

H

"

"

IIL

3009

" " " " " " "

34

0.4 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

"

5.5 V

"

"

A

21

21

"

35

5.5 V

0.4 V

5.5 V

"

"

"

"

"

"

"

B

"

"

"

36

"

5.5 V

0.4 V

"

"

"

"

"

"

"

C

"

"

"

37

"

"

5.5 V

0.4 V

"

"

"

"

"

"

D

"

"

"

38

"

"

"

5.5 V

0.4 V

"

"

"

"

"

E

"

"

"

39

"

"

"

"

5.5 V

0.4 V

"

"

"

"

F

"

"

"

40

"

"

"

"

"

5.5 V

"

0.4 V

"

"

G

"

"

"

41

"

"

"

"

"

5.5 V

"

5.5 V

0.4 V

"

H

"

"

"

IOS

3011

42

GND

GND

GND

GND

GND

GND

"

GND

GND

GND

"

y

31

31

mA

IC C H

3006

43

GND

GND

GND

GND

GND

GND

"

GND

GND

"

VC C

0.5

"

IC C L

3005

44

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

"

5.5 V

5.5 V

"

VC C

1.1

"

2

Same tests, terminal conditions and limits as for subgroup 1, except TC = 125° C, and V I C tests are omitted.

3

Same tests, terminal conditions and limits as for subgroup 1, except TC =  -55° C, and V I C tests are omitted.