MIL-M-38510-300 Microcircuits, Digital, Bipolar, Low-Power Schottky, Ttl,And Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low power, Schottky, TTL, positive NAND logic gate microcircuits.

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MIL-M-38510/300E

Device types 01 thru 09

NOTES:

1.  The pulse generator has the following characteristics:

t1  ≤ 15 ns, t0  ≤ 6 ns, PRR ≤ 1 MHz, duty cycle = 50% and ZOUT  = 50ν.

2.  Inputs not under test are at 2.7 V.

3.  CL  = 50 pF ±10%, including scope probe, wiring, and stray capacitance.

4.  RL  = 2 kν ±5%.

5.  Voltage measurements are to be made with respect to network ground terminal.

FIGURE 3.  Switching time test circuit and waveforms for device types 01 through 09.

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