MIL-M-38510-300 Microcircuits, Digital, Bipolar, Low-Power Schottky, Ttl,And Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low power, Schottky, TTL, positive NAND logic gate microcircuits.

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Subgroup

Symbol

MIL-STD-

883 method

Cases

A,8,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Unit

Case 11

X and 2

2

3

4

6

8

9

10

12

13

14

16

18

19

20

Test no.

1A

18

NC

1C

1D

1Y

GND

2Y

2A

28

NC

2C

2D

VCC

Min

Max

1

Tc = 25°C

VOH

3006

" " " " " " "

1

0.7 V

5.5 V

5.5 V

5.5 V

-400 ∝A

GND

5.5 V

5.5 V

5.5 V

5.5 V

4.5 V

1Y

2.5 V

V

2

5.5 V

0.7 V

5.5 V

"

"

"

"

"

"

"

"

1Y

"

"

3

"

5.5 V

0.7 V

"

"

"

"

"

"

"

"

1Y

"

"

4

"

"

5.5 V

0.7 V

"

"

"

"

"

"

"

1Y

"

"

5

"

"

"

5.5 V

"

-400 ∝A

0.7 V

"

"

"

"

2Y

"

"

6

"

"

"

"

"

"

5.5 V

0.7 V

"

"

"

2Y

"

"

7

"

"

"

"

"

"

"

5.5 V

0.7 V

"

"

2Y

"

"

8

"

"

"

"

"

"

"

5.5 V

5.5 V

0.7 V

"

2Y

"

"

VOL

3007

3007

9

2.0 V

2.0 V

2.0 V

2.0 V

4mA

"

GND

GND

GND

GND

"

1Y

0.4

"

10

GND

GND

GND

GND

"

4mA

2.0 V

2.0 V

2.0 V

2.0 V

"

2Y

0.4

"

VIC

11

-18 mA

"

"

1A

-1.5

"

12

-18 mA

"

"

18

"

"

13

-18 mA

"

"

1C

"

"

14

-18mA

"

"

1D

"

"

15

"

-18 mA

"

2A

"

"

16

"

-18 mA

"

28

"

"

17

"

-18 mA

"

2C

"

"

18

"

-18 mA

"

2D

"

"

IIH1

3010

" " " " " " "

19

2.7 V

GND

GND

GND

"

GND

GND

GND

GND

5.5 V

1A

20

∝A

20

GND

2.7 V

GND

"

"

"

"

"

"

"

18

"

"

21

"

GND

2.7 V

"

"

"

"

"

"

"

1C

"

"

22

"

"

GND

2.7 V

"

"

"

"

"

"

1D

"

"

23

"

"

"

GND

"

2.7 V

"

"

"

"

2A

"

"

24

"

"

"

"

"

GND

2.7 V

"

"

"

28

"

"

25

"

"

"

"

"

"

GND

2.7 V

"

"

2C

"

"

26

"

"

"

"

"

"

"

GND

2.7 V

"

2D

"

"

IIH2

"

" " " " " " "

27

5.5 V

"

"

"

"

"

"

"

GND

"

1A

100

"

28

GND

5.5 V

"

"

"

"

"

"

"

"

18

"

"

29

"

GND

5.5 V

"

"

"

"

"

"

"

1C

"

"

30

"

"

GND

5.5 V

"

"

"

"

"

"

1D

"

"

31

"

"

"

GND

"

5.5 V

"

"

"

"

2A

"

"

32

"

"

"

"

"

GND

5.5 V

"

"

"

28

"

"

33

"

"

"

"

"

"

GND

5.5 V

"

"

2C

"

"

34

"

"

"

"

"

"

GND

GND

5.5 V

"

2D

"

"

IIL

3009

" " " " " " "

35

0.4 V

5.5 V

5.5 V

5.5 V

"

5.5 V

5.5 V

5.5 V

"

"

1A

21

21

"

36

5.5 V

0.4 V

5.5 V

"

"

"

"

"

"

"

18

"

"

"

37

"

5.5 V

0.4 V

"

"

"

"

"

"

"

1C

"

"

"

38

"

"

5.5 V

0.4 V

"

"

"

"

"

"

1D

"

"

"

39

"

"

"

5.5 V

"

0.4 V

"

"

"

"

2A

"

"

"

40

"

"

"

"

"

5.5 V

0.4 V

"

"

"

28

"

"

"

41

"

"

"

"

"

"

5.5 V

0.4 V

"

"

2C

"

"

"

42

"

"

"

"

"

"

5.5 V

5.5 V

0.4 V

"

2D

"

"

"

IOS

3011

3011

43

GND

GND

GND

GND

GND

"

"

1Y

31

31

mA

44

"

GND

GND

GND

GND

GND

"

2Y

31

31

"

IC C H

3005

49

GND

GND

GND

GND

"

GND

GND

GND

GND

"

VC C

0.8

"

IC C L

3005

50

5.5 V

5.5 V

5.5 V

5.5 V

"

5.5 V

5.5 V

5.5 V

5.5 V

"

VC C

2.2

"

2

Same tests, terminal conditions and limits as for subgroup 1, except TC = 125° C, and V I C tests are omitted.

3

Same tests, terminal conditions and limits as for subgroup 1, except TC =  -55° C, and V I C tests are omitted.