MIL-M-38510-702 Microcircuits, Linear, Regulating Pulse Width Modulators, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, regulating, pulse width modulator microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions   1/

-55°C ≤ TC ≤ +125°C

see figure 3

unless otherwise specified

Device type

Limits

Units

Min

Max

Current sense amplifier section - continued

Input bias current

II82

V(CUR LIM/SS pin) = 0.5 V, COMP pin open   3/

All

-10

µA

Input offset current

IIO2

V(CUR LIM/SS pin) = 0.5 V, COMP pin open   3/

All

-1.0

1.0

µA

Time delay to outputs

tD1

TC = +25°C

All

500

ns

Current limit adjust section

Current limit offset voltage

VCLO

V(-CUR SENSE pin) = 0 V, V(+CUR SENSE pin) = 0 V,

COMP pin open   3/

All

0.40

0.55

V

Input bias current voltage

II83

V(+ERROR AMP pin) = VREF, V(-ERROR AMP pin) = 0 V

All

-30

µA

SHUTDOWN terminal section

Threshold voltage

VTH

All

250

400

mV

Latching voltage

VLATCH

Current into CUR LIM/SS  pin =

3.0 mA    5/

All

2.0

V

Nonlatching voltage

VNLATCH

Current into CUR LIM/SS  pin =

0.8 mA    6/

All

5.0

V

Time delay to outputs

tD2

TC = +25°C

All

600

ns

Output section

Collector emitter voltage

VCE

All

40

V

Collector leakage current

IC

VC = 40 V   7/

All

200

µA

Low level output voltage

VOL2

ISINK = 20 mA

All

0.4

V

ISINK = 100 mA

2.1

High level output voltage

VOH2

ISOURCE = -20 mA

All

13

V

ISOURCE = -100 mA

12

Rise time

tr

CL = 1,000 pF

All

130

ns

Fall time

tf

CL = 1,000 pF

All

130

ns