MIL-M-38510-652 Microcircuits, Digital, High-Speed Cmos, And Gates, Or Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/652B

c.  Burn-in (method 1015 of MIL-STD-883).

(1)        Unless otherwise specified in the manufacturers QM plan for static tests (test condition A), ambient temperature (TA) shall be +125°C minimum.  Test duration for each static test shall be 24 hours minimum for class S devices and in accordance with table I of method 1015 for class B devices.

i.     For static burn-in I, all inputs shall be connected to GND.  Outputs shall be open or connected to VCC/2.  Resistors are optional on outputs if open.  Resistors are required on inputs and on outputs connected to VCC/2.  R = 470n to 47 kn.

ii.        For static burn-in II, all inputs shall be connected through a resistor to VCC.  Outputs shall be open or connected to VCC/2.  Resistors are optional on outputs if open.  Resistors are required on inputs and on outputs connected to VCC/2.  R = 470n to 47 kn.

(2)        Unless otherwise specified in the manufacturers QM plan for dynamic test (test condition D), ambient temperature shall be +125°C minimum.  Test duration shall be in accordance with table I of method 1015.

i.     For dynamic burn-in, all inputs shall be connected through the resistors in parallel to a common CP.

Outputs shall be connected to VCC/2 ±0.5 V through the resistors.  R = 1 kn ±5% for outputs,

470n to 47 kn for inputs.  For device type 02, one input for each gate shall be connected to VCC or

GND.

ii.     CP = 25 kHz to 1 MHz square wave; duty cycle = 50% ±15%; VIH = 4.5 V to VCC; VIL = 0.0 V ±0.5 V;

transition time ≤ 0.5 µs.

iii.    VCC = 6.0 V ±0.5 V.

d.    Interim and final electrical test parameters shall be as specified in table II.

e.    For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electrical parameter requirements.

4.2.1  Percent defective allowable (PDA).

a.        The PDA for class S devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on the exact number of devices submitted to each separate burn-in.

b.    Static burn-in I and II failure shall be cumulative for determining the PDA.

c.        The PDA for class B devices shall be in accordance with MIL-PRF-38535 for static burn-in.  Dynamic burn-in is not required.

d.        Those devices whose measured characteristics, after burn-in, exceed the specified delta (�) limits or electrical parameter limits specified in table III, subgroup 1, are defective and shall be removed from the lot.  The verified failures divided by the total number of devices in the lot initially submitted to burn-in shall be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified PDA.

4.3  Qualification inspection.  Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4  Technology Conformance inspection (TCI).  Technology conformance inspection shall be in accordance with

MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).

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