MIL-M-38510-323 Microcircuits, Digital, Bipolar, Low-Power Schottky Ttl, Quadruple Bus Buffer Gates With Three State Outputs, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, quadruple bus buffer gates with three state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/323D

TABLE I. Electrical performance characteristics.

Test	Symbol	Conditions 1/ -55°C ≤ TC ≤ +125°C	Device types	Limits		Unit
				Min	Max
Propagation delay time (low to high level)	tPLH	CL = 50 pF, RL = 110 n VCC = 5.0 V	01, 02	2	20	ns
Propagation delay time (high to low level)	tPHL		01, 02	2	24	ns
Output enable time to high level	tPZH		01	2	28	ns
			02	2	33
Output enable time to low level	tPZL		01	2	33	ns
			02	2	46
Output disable time from high level	tPHZ		01	2	41	ns
			02	2	48
Output disable time from low level	tPLZ		01	2	33	ns
			02	2	39

1/ Complete terminal conditions shall be as specified in table III.

2/ Not more than one output should be shorted at a time. The duration of any short circuit should not exceed 5 seconds.

TABLE II. Electrical test requirements.

MIL-PRF-38535 test requirements	Subgroups (see table III)
MIL-PRF-38535 test requirements	Class S devices	Class B devices
Interim electrical parameters	1	1
Final electrical test parameters	1*, 2, 3, 9, 10, 11	1*, 2, 3, 9
Group A test requirements	1, 2, 3, 9, 10, 11	1, 2, 3, 9
Group B electrical test parameters when using the method 5005 QCI option	1, 2, 3, 9, 10, 11	N/A
Group C end-point electrical parameters	1, 2, 3, 9, 10, 11	1, 2, 3
Additional electrical subgroups for group C periodic inspections	N/A	10, 11
Group D end-point electrical parameters	1, 2, 3	1, 2, 3

*PDA applies to subgroup 1.