MIL-M-38510-323 Microcircuits, Digital, Bipolar, Low-Power Schottky Ttl, Quadruple Bus Buffer Gates With Three State Outputs, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, quadruple bus buffer gates with three state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/323D

1.3  Absolute maximum ratings.

Supply voltage range .............................................................................. -0.5 V dc to +7.0 V dc

Input voltage range ................................................................................. -1.5 V dc at -18 mA to +5.5 V dc

Storage temperature range ..................................................................... -65° to +150°C Maximum power dissipation, (PD)  1/

Device type 01...................................................................................... 110  mW dc

Device type 02...................................................................................... 121 mW dc

Lead temperature (soldering, 10 seconds)  ............................................. +300°C Thermal resistance, junction to case (eJC):

Cases A, C, D, and 2 ............................................................................ (See MIL-STD-1835)

Junction temperature (TJ) 2/  ................................................................... +175°C

1.4  Recommended operating conditions.

Low level output current (IOL)  .................................................................. 12 mA maximum

High level output current (IOH) ................................................................. -1.0 mA maximum

Supply voltage (VCC) ............................................................................... 4.5 V dc minimum to 5.5 V dc maximum

Minimum high level input voltage (VIH) .................................................... 2.0 V dc

Maximum low level input voltage (VIL)  .................................................... 0.7 V dc

Case operating temperature range (TC) .................................................. -55° to +125°C

2.  APPLICABLE DOCUMENTS

2.1  Government documents.

2.1.1  Specifications and Standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified, the issues of these documents shall be those listed in the issue of the Departments of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for. STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outlines

(Unless otherwise indicated, copies of the above specifications and standards are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-5094.)

2.2  Order of precedence.  In the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence.  Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

1/  Must withstand the added PD  due to short-circuit test (e.g., IOS).

2/  Maximum junction temperature shall not be exceeded except in accordance with allowable short

duration burn-in screening condition in accordance with MIL-PRF-38535.

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