MIL-M-38510-302 Microcircuits, Digital, Bipolar Low-Power Schottky Ttl, Buffers, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, positive buffer microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/302D

1.3  Absolute maximum ratings.

Supply voltage range  .............................................................................  -0.5 V dc to +7.0 V dc

Input voltage range  ................................................................................  -1.5 V dc at -18 mA to +5.5 V dc

Storage temperature range  ....................................................................  -65° to +150°C

Maximum power dissipation, (PD)  1/ ......................................................  17 mW dc per buffer

Lead temperature (soldering, 10 seconds) .............................................  +300°C

Thermal resistance, junction to case (εJC):

Cases A, B, C, D, and 2  .......................................................................  (See MIL-STD-1835)

Junction temperature (TJ) .......................................................................  +175°C  2/

1.4  Recommended operating conditions.

Supply voltage (VCC)  ..............................................................................  +4.5 V dc minimum to 5.5 V dc maximum

Minimum high level input voltage (VIH) ...................................................  +2.0 V Maximum low level input voltage (VIL) ....................................................  +0.7 V Normalized fanout (each output) 3/ ........................................................  30 maximum Case operating temperature range (TC)  .................................................  -55° to +125°C

2.  APPLICABLE DOCUMENTS

2.1  Government documents.

2.1.1  Specifications and Standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified, the issues of these documents shall be those listed in the issue of the Departments of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-M-38510       -        Microcircuits, General Specification for.

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outlines

(Copies of the specification and standard required by contractors in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.)

2.2  Order of precedence.  In the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence.  Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

1/  Must withstand the added PD  due to short-circuit test (e.g., IOS).

2/  Maximum junction temperature shall not be exceeded except for allowable short duration burn-in

screening condition per method 5004 of MIL-STD-883.

3/  The device shall fanout in both high and low levels to the specified number of inputs for the same device type as that being tested.

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