MIL-M-38510-113 Microcircuits, Linear, 8 Bit, Digital-To-Analog Converters, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, 8 bit, digital-to-analog converters. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/113C

TABLE I. Electrical performance characteristics - Continued.

Characteristics	Symbol	Conditions 1/ -55°C ≤ TA ≤ +125°C (table III and figures 2, 3, and 4 unless otherwise indicated)	Device type	Limits		Units
Characteristics	Symbol		Device type	Min	Max	Units
Positive and negative bit error difference	� ∑NL	Measure I0, LNL + - LNL -	01	-0.05	0.05	%
	� ∑NL	Measure I0, LNL + - LNL -	02	-0.033	0.033	%
	�LNL	Measure I0 , LNL + - LNL -	01	-0.05	0.05	%
	�LNL	Measure I0 , LNL + - LNL -	02	-0.033	0.033	%
Positive relative accuracy	NL+	Measure I0, LNL + + �LNL	01	0	0.19	%
	NL+	Measure I0, LNL + + �LNL	02	0	0.11	%
	NL +	Measure I0 , LNL + + �LNL	01	0	0.19	%
	NL +	Measure I0 , LNL + + �LNL	02	0	0.11	%
Negative relative accuracy	NL-	Measure I0, LNL - + �LNL	01	0	0.19	%
	NL-	Measure I0, LNL - + �LNL	02	0	0.11	%
	NL -	Measure I0 , LNL - + �LNL	01	0	0.19	%
	NL -	Measure I0 , LNL - + �LNL	02	0	0.11	%
Monotonicity	�(i)	Measure I0, (I0N-I0N-1) � 0 at each major carry point	All	0	16.0	µA
Monotonicity	�(i)	Measure I0 , (I0N - I0N - 1) � 0 at each major carry point	All	0	16.0	µA
0utput symmetry	�IFS	IFS - IFS	01	-8.0	8.0	µA
0utput symmetry	�IFS	IFS - IFS	02	-4.0	4.0	µA
Full scale current temperature coefficient	TC(IFS)	All input bits high, measure I0	All	-50.0	50.0	ppm/°C
Full scale current temperature coefficient	TC(IFS)	All input bits low, measure I0	All	-50.0	50.0	ppm/°C
Propagation delay time, high-to-low level	tPHL	Figure 3, measure V0	All	6.0	60.0	ns
Propagation delay time, low-to-high level	tPLH	Figure 3, measure V0	All	6.0	60.0	ns
Reference amplifier input slew rate	dI0/dt	Figure 4, measure V0 , TA = 25°C	All	1.5	-----	mA/µs
Settling time high-to-low	tSHL	Figure 3, output within 1/2 LSB of final value of I0 ,TA = 25°C	All	10	135	ns
Settling time low-to-high	tSLH	Figure 3, output within 1/2 LSB of final value of I0 ,TA = 25°C	All	10	135	ns

1/ The following electrical performance characteristics apply unless otherwise stated in table I:

±VCC = ±15 Vdc, source resistance = 50 n, IREF = 2.0 mA.