MIL-M-38510/762B
TABLE III. Delta limits at 25°C.
Parameter 1/ |
Device types |
Limits |
ICCH, ICCL, ICCZ |
All |
±100 nA |
1/ The above parameters shall be recorded before and
after the required burn-in and life tests to determine delta limits (�).
4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein.
4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.7 herein). RHA levels for device classes B and S shall be as specified in MIL-PRF-38535.
a. End-point electrical parameters shall be as specified in table I herein.
b. For device classes B and S, subgroups 1 and 2 in table V, method 5005 of MIL-STD-883 shall be tested as appropriate for device construction.
c. RHA tests for device classes B and S for levels M, D, P, L, and R shall be performed through each level to determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial qualification and after design or process changes which may affect the RHA performance of the device.
d. Prior to irradiation, each selected sample shall be assembled in its qualified package. It shall pass the specified group A electrical parameters in table I for subgroups specified in table II herein.
e. The devices shall be subjected to radiation hardness assurance tests as specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883, method 1019, condition A, and as specified herein. Prior to and during total dose irradiation characterization and testing, the devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the devices for testing shall be biased to the worst case condition established during characterization. Devices shall be biased as follows:
a. Input tested high, VCC = 5.5 V dc +5%, RCC = 10n ±5%, VIN = 5.0 V dc +20%, RIN = 1 kn ±5%, and all outputs are open. The output enable control pin(s) shall be connected to RIN in parallel to VCC or GND, as applicable, to enable the outputs.
b. Inputs tested low, VCC = 5.5 V dc +5%, RCC = 10n ±5%, VIN = 0.0 V dc, and all outputs are open. The output enable control pin(s) shall be connected to RIN in parallel to VCC or GND, as applicable, to enable the outputs.
4.4.5.1.1 Accelerated aging test. Accelerated aging test shall be performed on class B and S devices requiring an RHA level greater that 5k rads (Si). The post-anneal end point electrical parameter limits shall be as specified in table I herein and shall be the preirradiation end point electrical parameter limit at +25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device.
4.5 Methods of inspection. Methods of inspection shall be specified and as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal.
4.5.2 Burn-in and life test cool down procedures. When the burn-in and life tests are completed and prior to removal of bias voltages, the devices under test (DUT) shall be cooled to within 10°C of their power stable condition at room temperature; then, electrical parameter end-point measurements shall be performed.
4.5.3 Quiescent supply current. When performing quiescent supply current measurements (ICC), the meter shall be placed so that all currents flow through the meter.
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