MIL-M-38510-508 Microcircuits, Memory, Digital, Cmos One-Time Programmable Array Logic, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, programmable array logic microcircuits which employ a one-time programmable EPROM cell as the programming element. Two

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MIL-M-38510/508A

TABLE I. Electrical performance characteristics - Continued.

Parameter	Symbol	Test conditions -55°C ≤ TC ≤ +125°C GND = 0 V 4.5 V ≤ VCC ≤ 5.5 V unless otherwise specified	Group A subgroups (test method)	Device types	Limits		Unit
					Min	Max
Input to output disable	tPLZ	VCC = 4.5 V See figure 4	9,10,11 (3003)	01,02		25	ns
				03		20
				04		15
Clock pulse width 4/	tWH		9,10,11 (3003)	01	20		ns
				02,03	15
				04	6
Clock pulse width 4/	tWL		9,10,11 (3003)	01	20		ns
				02,03	15
				04	6
Setup time	tS		9,10,11 (3003)	01	20		ns
				02	18
				03	17
				04	12
Hold time	tH		9,10,11 (3003)	All	0		ns
Maximum clock frequency 6/	fMAX		9,10,11 (3003)	01	25		MHz
				02	30
				03	31.2
				04	45
Asynchronous reset pulse width	tAW		9,10,11 (3003)	01	30		ns
				02	25
				03	20
				04	15
Asynchronous reset recovery time	tAR		9,10,11 (3003)	01	30		ns
				02	25
				03	20
				04	15
Asynchronous reset to registered output reset	tAP		9,10,11 (3003)	01		30	ns
				02,03		25
				04		20

1/ These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.

2/ I/O terminal leakage is the worst case of IIX or IOZ.

3/ For test purposes, not more than one output should be shorted at a time. Short circuit test duration

should not exceed one second.

4/ Tested initially and after any design or process changes that affect that parameter, and therefore shall be guaranteed to the limits specified in table I.

5/ Test applies only to registered outputs.

6/ fMAX is derived by testing tS and tCO and is not tested directly. fMAX = 1/(tS + tCO).