MIL-M-38510-330 Microcircuits, Digital, Bipolar Advanced Schottky Ttl, Nand Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21

Subgroup

Symbol

MIL-STD-

883 method

Cases

A,8,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Unit

Case 1/ X, 2

2

3

4

6

8

9

10

12

13

14

16

18

19

20

Test no.

1A

18

2A

28

2C

2Y

GND

3Y

3A

38

3C

1Y

1C

VCC

Min

Max

1

Tc = 25°C

IOS

3011

" "

49

GND

GND

GND

0.0 V

GND

5.5 V

1Y

-60

-150

mA

50

GND

GND

GND

0.0 V

"

"

2Y

"

"

"

51

"

0.0 V

GND

GND

GND

"

3Y

"

"

"

IOD

52

5.5 V

5.5 V

"

2.5 V

5.5 V

4.5 V

1Y

60

"

53

5.5 V

5.5 V

5.5 V

2.5 V

"

"

2Y

"

"

54

"

2.5 V

5.5 V

5.5 V

5.5 V

"

3Y

"

"

IC C H

3005

55

GND

GND

GND

GND

GND

"

GND

GND

GND

GND

5.5 V

VC C

2.1

"

IC C L

3005

56

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

"

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

VC C

7.7

"

2

Same tests, terminal conditions and limits as for subgroup 1, except TC = 125° C, and V I C tests are omitted.

3

Same tests, terminal conditions and limits as for subgroup 1, except TC =  -55° C, and V I C tests are omitted.

9

Tc = 25°C

tPHL

3003

Fig. 3 "

"

" " " " "

57

IN

2.7 V

GND

OUT

2.7 V

5.0 V

1A to 1Y

1.5

4.3

ns

58

2.7 V

IN

"

"

2.7 V

"

18 to 1Y

"

"

"

59

2.7 V

2.7 V

"

"

IN

"

1C to 1Y

"

"

"

60

IN

2.7 V

2.7 V

OUT

"

"

2A to 2Y

"

"

"

61

2.7 V

IN

2.7 V

"

"

"

28 to 2Y

"

"

"

62

2.7 V

2.7 V

IN

"

"

"

2C to 2Y

"

"

"

63

"

OUT

IN

2.7 V

2.7 V

"

3A to 3Y

"

"

"

64

"

"

2.7 V

IN

2.7 V

"

38 to 3Y

"

"

"

65

"

"

2.7 V

2.7 V

IN

"

3C to 3Y

"

"

"

tPLH

" " " " " " " " "

66

IN

2.7 V

GND

OUT

2.7 V

"

1A to 1Y

2.4

5.0

"

67

2.7 V

IN

"

"

2.7 V

"

18 to 1Y

"

"

"

68

2.7 V

2.7 V

"

"

IN

"

1C to 1Y

"

"

"

69

IN

2.7 V

2.7 V

OUT

"

"

2A to 2Y

"

"

"

70

2.7 V

IN

2.7 V

"

"

"

28 to 2Y

"

"

"

71

2.7 V

2.7 V

IN

"

"

"

2C to 2Y

"

"

"

72

"

OUT

IN

2.7 V

2.7 V

"

3A to 3Y

"

"

"

73

"

"

2.7 V

IN

2.7 V

"

38 to 3Y

"

"

"

74

"

"

2.7 V

2.7 V

IN

"

3C to 3Y

"

"

"

10

tPHL

"

75-83

Same tests and terminal conditions as for subgroup 9, except TC = 125°C

1.5

6.5

"

tPLH

"

84-92

2.0

7.0

"

11

Same tests, terminal conditions and limits as for subgroup 10, except TC =  -55° C.

Parameters

Min/Max limits in mA for circuit

A

8

C

D

IIL 1

-.25/-.60

-.03/-.06

-.03/-.60

0/-.30