MIL-M-38510-330 Microcircuits, Digital, Bipolar Advanced Schottky Ttl, Nand Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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Test

Symbol

Conditions

-55°C ≤ TC  ≤ +125°C

Device

types

Limits

Unit

Min

Max

High level output voltage

VOH

VCC  = 4.5 V, VIL  = 0.8 V, IOH  = -1.0 mA

All

2.5

V

Low level output voltage

VOL

VCC  = 4.5 V, IOL  = 20 mA, VIH  = 2.0 V

All

0.5

V

Input clamp voltage

VI C

VCC  = 4.5 V, IIN  = -18 mA, TC  = +25°C

All

-1.2

V

High level input current

IIH1

VCC  = 5.5 V, VIN  = 2.7 V

All

20

µA

IIH2

VCC  = 5.5 V, VIN  = 7.0 V

All

100

µA

Low level input current

IIL

VCC  = 5.5 V, VIN  = 0.5 V

All

0

-.60

mA

Short circuit output

current   1/

IOS

VCC  = 5.5 V

All

-60

-150

mA

Output drive

IOD

VCC  = 4.5 V, VIN  = 0.0 V, VOUT  = 2.5 V

01, 03,

04

60

mA

02

50

High level supply current

ICCH

VCC  = 5.5 V

01

2.8

mA

02

4.2

03

2.1

04

1.4

Low level supply current

ICCL

VCC  = 5.5 V

01

10.2

mA

02

15.3

03

7.7

04

5.1

Propagation delay time,

high-to-low level

tPHL

VCC  = 5.0 V, CL = 50 pF ± 10%, RL  = 500o ± 5%

All

1.5

6.5

ns

Propagation delay time

low-to-high level

tPLH

VCC  = 5.0 V, CL = 50 pF ± 10%, RL  = 500o ± 5%

All

2.0

7.0

ns