MIL-M-38510-3 Microcircuits, Digital, Bipolar, Ttl, Nand Buffers Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, TTL, positive NAND buffer microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

-55°C = TC  = +125°C

Device type

Limits

Units

Min

Max

High-level output

voltage

VOH

VCC = 4.5 V, VIN = 0.8 V,           11

IOH = -1.2 mA

01, 02

2.4

V

Low-level output voltage

VOL

VCC = 4.5 V, IOL = 48 mA,           11

VIN = 2.0 V for all inputs of gate under test

01, 02, 03

0.4

V

Input clamp voltage

VIC

VCC = 4.5 V, IIN = -12 mA, TC = +25°C

01, 02, 03

-1.5

V

High-level input

current

IIH1

VCC = 5.5 V, VIN = 2.4 V          21

01, 02, 03

40

∝A

High-level input

current

IIH2

VCC = 5.5 V, VIN = 5.5 V          21

01, 02, 03

100

∝A

Low-level input

current

IIL

VCC = 5.5 V, VIN = 0.4 V           11

01, 02, 03

-1.6

mA

Short-circuit output

current

IOS

VCC = 5.5 V                           21 31

01, 02

-20

-70

mA

Maximum collector

cut-off-current

ICEX

VOH = 5.5 V

VCC = 4.5 V, VIN = 0.7 V

03

250

∝A

High-level supply current

ICCH

VCC = 5.5 V, VIN = 0 V              21

01

8

mA

02

15.5

mA

03

8.5

mA

Low-level supply current

ICCL

VCC = 5.5 V,                              11

VIN = 5.5 V

01

27

mA

02

54

mA

03

54

mA

Propagation delay time

high-to-low level

tPHL

CL = 125 pF ± 10%,

RL = 133 ν  ± 5%

01, 02

3

30

ns

03

3

38

Propagation delay time

low-to-high level

tPLH

CL = 125 pF ± 10%, RL = 133 ν  ± 5%

01, 02, 03

3

30

ns