MIL-M-38510-23 Microcircuits, Digital, Ttl, High Speed, Nand Gates Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, TTL, high speed, positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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MIL-M-38510/23D

1.3  Absolute maximum ratings.

Supply voltage range ........................................................................ -0.5 V dc to +7.0 V dc

Input voltage range ........................................................................... -1.5 V dc at -12 mA to +5.5 V dc

Storage temperature range ............................................................... -65°C to +150°C Maximum power dissipation per gate (PD)  ....................................... 60 mW dc   2/

Lead temperature (soldering, 10 seconds)   ...................................... +300°C.

Junction temperature (TJ) ................................................................. +175°C Thermal resistance, junction-to-case (ΘJC):

Cases A, B, C, and D ....................................................................  See MIL-STD-1835

1.4   Recommended operating conditions.

Supply voltage (VCC) ........................................................................  4.5 V dc minimum to 5.5 V dc maximum

Minimum high-level input voltage (VIH) ............................................. 2.0 V dc

Maximum low-level input voltage (VIL) .............................................. 0.8 V dc

Normalized fanout (each output) ....................................................... 10 maximum   3/

Ambient operating temperature range (TC)  ...................................... -55°C to +125°C

2.  APPLICABLE DOCUMENTS

2.1  Government documents.

2.1.1  Specifications, standards, and handbooks.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified, the issues of these documents are those listed in the issue of the Departments of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535     -   Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883      -   Test Method Standard for Microelectronics.

MIL-STD-1835    -   Interface Standard Electronic Component Case Outlines.

(Copies of these documents are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-5094.

2.2  Order of precedence.  In the event of a conflict between the text of this specification and the references cited herein the text of this document shall takes precedence.  Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

2/  Must withstand the added PD due to short circuit test (e.g., IOS) at one output for 5 seconds duration.

3/  The device shall fanout in both high and low levels to the specified number of inputs of the same device

type as that being tested.

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