MIL-M-38510-131 Microcircuits, Linear, Low Noise Operational Amplifiers, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low noise operational amplifiers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535.

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TABLE III. Group A inspection for all device types - Continued.

Subgroup	Symbol	MIL-STD- 883 method	Test no.	Notes	Adapter pin number			Energized relays	Measured pin			Equation	Limits		Unit
					1	2	3		No.	Value	Units		Min	Max
7 TA = +25°C	TR(tr)		92	Fig. 4	15	-15	50 mV	None	4	E87	mV	TR(tr) = E87		40	ns
	TR(os)		93	Fig. 4	15	-15	50 mV	None	4	E88	mV	TR(tr) = E87		40	%
	EN		94 95	f = 100 Hz f = 10 kHz Fig. 6						E89 E90	nV "	2 EN = ((E89) - .882) x .5 2 EN = ((E90) - .882) x .5		9	nV/ Hz
														5.0
	IN		96 97 98 99	f = 30 Hz f = 100 Hz f = 1 kHz f = 10 kHz Fig. 6						E91 E92 E93 E94	" " " "	2 2 IN = (((E91) - (E61) - 1644)/10000) x .5 2 2 IN = (((E92) - (E89) - 1644)/10000) x .5 2 2 IN = (((E93) - (E62) - 1644)/10000) x .5 2 2 IN = (((E94) - (E90) - 1644)/10000) x .5		10 5 2 2	pA/Hz " " "
	SR(+)	4002	100		15	-15	0	K4, K9	5	E95	V	SR(+) = E95 Device 01 Device 02	10		V/∝s
													3
	SR(-)	4002	101		15	-15	0	K4, K9	5	E96	V	SR(-) = E96 Device 01 Device 02	10		V/∝s
													3
	NI(BB)		102	Fig. 7	15	-15	0	None	4	E97	∝V	NI(BB) = E97/10		500	nVrms
	CS(A)		103	Fig. 8 5/	15	-15	10 -10	None		E98 E99	V	CS(A) = 20 log(20000/(E98 - E99)	80		dB
	CS(B)		104	Fig. 8 5/	15	-15	10 -10	K1,K2,K3		E100 E101	V	CS(A) = 20 log(20000/(E100 - E101)	80		dB
8 TA = +125°C	TR(tr)		105	Fig. 4	15	-15	50 mV	None	4	E102	mV	TR(tr) = E102		40	ns
	TR(os)		106	Fig. 4	15	-15	50 mV	None	4	E103	mV	TR(os) = E103		40	%
	SR(+)	4002	107		15	-15	0	K4, K9	5	E104	V	SR(+) = E104 Device 01 Device 02	10		V/∝s
													3
	SR(-)	4002	108		15	-15	0	K4, K9	5	E105	V	SR(-) = E105 Device 01 Device 02	10		V/∝s
													3
8 TA = -55°C	TR(tr)		109	Fig. 4	15	-15	50 mV	None	4	E106	mV	TR(tr) = E106		40	ns
	TR(os)		110	Fig.4	15	-15	50 mV	None	4	E107	mV	TR(os) = E107		40	%
	SR(+)	4002	111		15	-15	0	K4, K9	5	E108	V	SR(+) = E108 Device 01 Device 02	10		V/∝s
													3
	SR(-)	4002	112		15	-15	0	K4, K9	5	E109	V	SR(-) = E109 Device 01 Device 02	10		V/∝s
													3
12 TA = 25°C	tS(+)		113	Fig. 5	15	-15	10	None	5	E110	mV	tS(+) = E110		4	∝s
	tS(-)		114	Fig. 5	15	-15	0	None	5	E111	mV	tS(-) = E111		4	∝s

1/ IIO is calculated using data from previous tests.

2/ CMRR is calculated using data from previous tests.

3/ IOS(+) and IOS(-) are measured with the output shorted to ground for less than 25 milliseconds.

4/ VIO / t is calculated using data from previous tests. These read-and-record tests may be omitted except when subgroups 2 and 3 are being accomplished for group A sampling inspection and for groups C and D endpoint measurements.

5/ Device type 02 only.

6/ All tests apply to figure 3 unless otherwise specified.