MIL-M-38510-383 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, Octal Buffer Gates With Three State Outputs, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, TTL, advanced low power Schottky, octal bus buffer gates with three state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/3838

TA8LE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Limits		Unit
Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Min	Max	Unit
Input clamp voltage	VI C	VCC = 4.5 V, IIN = -18 mA, TC = +25°C	All		-1.5	V
Propagation delay time (low to high level)	tPLH1	VCC = 5.0 V, CL = 50 pF, RL = 500 n	01	3	12	ns
			02	3	13
			03	2	13
Propagation delay time (high to low level)	tPHL1		01	2	11	ns
			02	3	14
			03	3	16
Output enable time to low level	tPZL		01	5	20	ns
			02	5	18
			03	2	18
Output enable time to high level	tPZH		01	5	15	ns
			02	5	18
			03	2	18
Output disable time from low level	tPLZ		01	3	18	ns
			02	2	12
			03	1	12
Output disable time from high level	tPHZ		01, 02, 03	2	12	ns

1/ The output conditions have been chosen to produce a current that closely approximates one-half of the true short circuit output current, IOS.