MIL-M-38510-352 Microcircuits, Digital, Bipolar Advanced Schottky Ttl, Nand Buffers, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, NAND buffers. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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Test

Symbol

Conditions

-55°C ≤ TC  ≤ +125°C

unless otherwise specified

Device type

Limits

Unit

Min

Max

High level output voltage

VOH

VCC  = 4.5 V, VIL  = 0.8 V, IOH  = -1 mA, VIH  = 2.0 V

01, 03

2.5

V

Low level output voltage

VOL

VCC  = 4.5 V, IOL  = 48 mA, VIH  = 2.0 V, VIL  = 0.8 V

All

0.55

V

Input clamp voltage

VI C

VCC  = 4.5 V, IL  = -18 mA, TC  = +25°C

All

-1.2

V

High level input current

IIH1

VCC  = 5.5 V, VIN  = 2.7 V

All

20

µA

IIH2

VCC  = 5.5 V, VIN  = 7.0 V

All

100

µA

Low level input current

IIL1

VCC  = 5.5 V, VIL  = 0.5 V

All

0

-1.2

mA

Short circuit output

current   1/

IOS

VCC  = 5.5 V, VOS = 0.0 V

01, 03

-100

-225

mA

Maximum collector cut-off

current

ICEX

VCC  = 4.5 V, VIN  = 0.8 V,

02

250

µA

Supply current

ICCL

VCC  = 5.5 V

01

33

mA

02

30

03

17

ICCH

01

6

mA

02

7

03

4

Propagation delay time, high-to-low level

tPHL

VCC  = 5.0 V, CL = 50 pF ±10%, RL  = see figure 3

01

1.0

5.5

ns

02

1.0

6.0

03

1.0

5.5

Propagation delay time, low to high level

tPLH

01

1.5

7.0

ns

02

6.5

14.5

03

1.0

6.5