MIL-M-38510-310 Microcircuits, Digital, Bipolar Low-Power Schottly Ttl, And Gates Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/310D

1.3  Absolute maximum ratings.

Supply voltage range  .............................................................................  -0.5 V to +7.0 V

Input voltage range  ................................................................................  -1.5 V at -18 mA to +5.5 V Storage temperature range  ....................................................................  -65° to +150°C

Maximum power dissipation, (PD) 1/:

Device types 01 and 02 ........................................................................  36 mW

Device type 03  .....................................................................................  24.2 mW Device types 04 and 05 ........................................................................  48.4 mW Lead temperature (soldering, 10 seconds) .............................................  300°C Thermal resistance, junction to case (εJC):

Cases A, B, C, D, X and 2.....................................................................  See MIL-STD-1835

Junction temperature (TJ) .......................................................................  175°C  2/

1.4  Recommended operating conditions.

Supply voltage (VCC)  ..............................................................................  4.5 V minimum to 5.5 V maximum

Minimum high level input voltage (VIH) ...................................................  2.0 V Maximum low level input voltage (VIL) ....................................................  0.7 V

Case operating temperature range (TC)  .................................................  -55° to +125°C

2.  APPLICABLE DOCUMENTS

2.1  Government documents.

2.1.1  Specifications and Standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified, the issues of these documents shall be those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-M-38510         -    Microcircuits, General Specification for.

MIL-PRF-38535     -    Integrated Circuits (Microcircuits) Manufacturing, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-883     -   Test Method Standard for Microelectronics.

MIL-STD-1835   -   Interface Standard Electronic Component Case Outlines

(Unless otherwise indicated, copies of the above specifications and standards are available from the

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-5094.)

2.2  Order of precedence.  In the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence.  Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

1/  Must withstand the added PD  due to short-circuit test (e.g., IOS).

2/  Maximum junction temperature (TJ) may be increased during the burn-in screening and steady-state life test.  However, such temperatures should not be used under normal operating conditions.

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