MIL-M-38510-30 Microcircuits, Digital, Dtl, Nand Gates Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, DTL, positive logic NAND gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Test

Symbol

Conditions  1/

Device types

Limits

Units

Min

Max

High-level output voltage

VOH

VCC = 4.5 V, IOH = -0.12 mA

All

2.85

V

Low-level output voltage

VOL

VCC = 4.5 V, IOL = 12 mA

All

0.45

V

Low-level input current

IIL

VCC = 5.5 V

All

-0.6

-1.50

mA

High-level input current

IIH

VCC = 5.5 V

01, 03

04, 05

0

5.0

µA

Short circuit output current

IOS

VCC = 5.5 V, VOUT = 0 V, VIN = GND  2/

All

-0.59

-1.34

mA

High-level supply current per gate

ICCH1

VCC = 5.0 V, VIN = GND

All

1.47

mA

High-level supply current per gate

ICCH2

VCC = 8.0 V, VIN = GND

All

2.75

mA

Low-level supply current per gate

ICCL

VCC = 5.0 V, VIN = OPEN

All

3.25

mA

Collector cutoff current

ICEX

VCC = 4.5 V

All

100

µA

Propagation delay time low-to-high level output

tPLH

VCC = 5.0 V, CL = 30 pF RL = 3.9 kO

All

25

112

ns

Propagation delay time high-to-low level output

tPHL

VCC = 5.0 V, CL = 50 pF

RL = 390 O

01, 03

04, 05

10

40

ns

02

10

45

ns