MIL-M-38510-72 Microcircuits, Digital, Bipolar, Schottky Ttl, Nand Buffers, Monolithic SiliconThis specification covers the detail requirements for monolithic, silicon, Schottky TTL, positive NAND buffer microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Test

Symbol

Conditions

-55°C ≤ TC  ≤ +125°C

unless otherwise specified

Limits

Unit

Min

Max

High-level output voltage

VOH

VCC = 4.5 V, VIL = 0.8 V IOH = -3 mA  1/

At TC = +125°C, VIL = 0.7 V

2.5

V

Low-level output voltage

VOL

VCC = 4.5 V, IOL = 60 mA

VIN = 2.0 V for all inputs of gate under test  1/

0.5

V

At TC = +125°C

0.45

V

Input clamp voltage

VIC

VCC = 4.5 V, IIN = -18 mA TC = +25°C

-1.2

V

Collector cut-off current

ICEX

VCC = 5.5 V, VIL = GND, VIH = 5.5 V, VOH = 5.5 V

250

µA

High-level input current

IIH1

VCC = 5.5 V, VIN = 2.7 V  2/

100

µA

High-level input current

IIH2

VCC = 5.5 V, VIN = 5.5 V  2/

1

mA

Low-level input current

IIL

VCC = 5.5 V, VIN = 0.5 V  1/

-1

-4

mA

Short-circuit output current

IOS

VCC = 5.5 V  2/  3/

-50

-225

mA

High-level supply current per buffer

ICCH

VCC = 5.5 V  2/, VIN = 0 V

9

mA

Low-level supply current per buffer

ICCL

VCC = 5.5 V  1/, VIN = 5.5 V

22

mA

Propagation delay time, high-to-low level

tPHL

CL = 50 pF, RL = 93 0

2

8.5

ns

Propagation delay time, low-to-high level

tPLH

CL = 50 pF, RL = 93 0

2

8.5

ns