MIL-M-38510-375 Microcircuits, Digital, Bipolar, Advanced Low Power-Schottky Ttl, Or Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive OR logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/375A

TABLE I. Electrical performance characteristics.

Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Limits		Unit
Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Min	Max	Unit
High level output voltage	VOH	VCC = 4.5 V, VIH = 2.0 V, IOH = -400 µA, VIL = 0.8 V	01	2.5		V
Low level output voltage	VOL	VCC = 4.5 V, IOL = 4.0 mA, VIL = 0.8 V	01		0.4	V
Input clamp voltage	VI C	VCC = 4.5 V, IIN = -18 mA, TC = +25°C	01		-1.5	V
Low level input current	IIL	VCC = 5.5 V, VIN = 0.4 V	01	0	-100	µA
High level input current	IIH1	VCC = 5.5 V, VIN = 2.7 V	01		20	µA
High level input current	IIH2	VCC = 5.5 V, VIN = 7.0 V	01		100	µA
Output current 1/	IO	VCC = 5.5 V, VO = 2.25 V	01	-20	-112	mA
Supply current, outputs high	ICCH	VCC = 5.5 V, VIN = 4.5 V	01		4.0	mA
Supply current, outputs low	ICCL	VCC = 5.5 V, VIN = 0 V	01		4.9	mA
Propagation delay time, low-to-high level	tPLH	VCC = 5.0 V, CL = 50 pF, RL = 500 n	01	3	16	ns
Propagation delay time, high-to-low level	tPHL	VCC = 5.0 V, CL = 50 pF, RL = 500 n	01	3	14.5	ns

1/ The output conditions have been chosen to produce a current that closely approximates one half of the true short-circuit output current, IOS.