MIL-M-38510-373 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, Nor Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive NOR logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/373A

TABLE I. Electrical performance characteristics.

Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Limits		Unit
Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Min	Max	Unit
High level output voltage	VOH	VCC = 4.5 V, VIL = 0.8 V, IOH = -400 µA	All	2.5		V
Low level output voltage	VOL	VCC = 4.5 V, IOL = 4 mA, VIH = 2.0 V	All		0.4	V
Input clamp voltage	VI C	VCC = 4.5 V, IIN = -18 mA, TC = +25°C	All		-1.5	V
Low level input current	IIL	VCC = 5.5 V, VIN = 0.4 V	All	0	-100	µA
High level input current	IIH1	VCC = 5.5 V, VIN = 2.7 V	All		20	µA
High level input current	IIH2	VCC = 5.5 V, VIN = 7.0 V	All		100	µA
Output current 1/	IO	VCC = 5.5 V, VO = 2.25 V	All	-20	-112	mA
High level supply current	ICCH	VCC = 5.5 V, VIN = 0 V	01		2.2	mA
High level supply current	ICCH	VCC = 5.5 V, VIN = 0 V	02		1.8	mA
Low level supply current	ICCL	VCC = 5.5 V, VIN = 4.5 V	All		4.0	mA
Propagation delay time low-to-high level	tPLH	VCC = 5.0 V, CL = 50 pF, RL = 500o	01	3	14	ns
Propagation delay time low-to-high level	tPLH		02	4	22	ns
Propagation delay time, high-to-low level	tPHL		01	3	11	ns
Propagation delay time, high-to-low level	tPHL		02	3	10	ns

1/ The output conditions have been chosen to produce a current that closely approximates one half of the true short-circuit output current, IOS.