MIL-M-38510-340 Microcircuits, Digital, Bipolar Advanced Schottky Ttl, And Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M- 38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/340D

1.3  Absolute maximum ratings.

Supply voltage range  .............................................................................  -0.5 V to +7.0 V

Input voltage range  ................................................................................  -1.2 V at -18 mA to +7.0 V

Storage temperature range  ....................................................................  -65° to +150°C Maximum power dissipation, (PD)  1/

Device type 01  .................................................................................  71 mW

Device type 02  .................................................................................  53 mW

Lead temperature (soldering, 10 seconds) .............................................  +300°C Thermal resistance, junction to case (eJC):

Cases A, B, C, D, X, and 2 ...................................................................  (See MIL-STD-1835)

Junction temperature (TJ) 2/ ...................................................................  175°C

1.4  Recommended operating conditions.

Supply voltage (VCC)  ..............................................................................  4.5 V minimum to 5.5 V maximum

Minimum high level input voltage (VIH) ...................................................  2.0 V Maximum low level input voltage (VIL) ....................................................  0.8 V

Normalized fanout (each output)  3/

Low logic level ..................................................................................  33 maximum

High logic level .................................................................................  50 maximum

Case operating temperature range (TC)  .................................................  -55° to +125°C

2.  APPLICABLE DOCUMENTS

2.1  General.  The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples.  While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2  Government documents.

2.2.1  Specifications and Standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outlines

(Copies of these documents are available online at https://assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-

5094.)

1/  Must withstand the added PD  due to short-circuit test (e.g., IOS).

2/  Maximum junction temperature shall not be exceeded except in accordance with allowable short

duration burn-in screening condition in accordance with MIL-PRF-38535.

3/  Device will fanout in both high and low levels to the specified number of data inputs on the same device type as that being tested.

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