MIL-M-38510-24 Microcircuits, Digital, Ttl, Nand Buffers, High Speed, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, TTL, high speed positive NAND buffer microcircuits. One product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11

Test

Symbol

Conditions

-55qC ≤ TC  ≤ +125qC

unless otherwise specified

Limits

Unit

Min

Max

High level output voltage

VOH

VCC  = 4.5 V, VIN  = 0.8 V IOH  = -1.5 mA  1/

2.4

V

Low level output voltage

VOL

VCC  = 4.5 V, IOL  = 60 mA VIN  = 2.0 V for all inputs of gate under test  1/

0.4

V

Input clamp voltage

VIC

VCC  = 4.5 V, IIN  = -12 mA TC = +25qC

-1.5

V

High level input current

IIH1

VCC  = 5.5 V, VIN  = 2.4 V  2/

100

µA

High level input current

IIH2

VCC  = 5.5 V, VIN  = 5.5 V  2/

1

mA

Low level input current

IIL

VCC  = 5.5 V, VIN  = 0.4 V  1/

-2

-4

mA

Short circuit output current

IOS

VCC  = 5.5 V  2/  3/

-40

-125

mA

High level supply current

ICCH

VCC  = 5.5 V  2/, VIN  = 0 V

16

mA

Low level supply current

ICCL

VCC  = 5.5 V, VIN  = 4.5 V

40

mA

Propagation delay time, high to low level

tPHL

CL  = 50 pF -10% RL  = 93 0 ± 5%

2

20

ns

Propagation delay time, low to high level

tPLH

CL  = 50 pF -10% RL  = 93 0 ± 5%

2

20

ns