MIL-M-38510-20 Microcircuits, Digital, Ttl, Low Power, Nand Gates ,Monolithic SiliconThis specification covers the detail requirements for monolithic, silicon, TTL, low power positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/20D

TABLE II. Electrical test requirements.

MIL-PRF-38535

Test requirement

Subgroups (see table III)

Class S Devices

Class B Devices

Interim electrical parameters

Final electrical test parameters

1*, 2, 3, 9

Group A test requirements

1, 2, 3, 9,

10, 11

1, 2, 3, 9

Group B electrical test parameters

when using the method 5005 QCI option

1, 2, 3

N/A

Groups C end point electrical parameters

1, 2, 3

Additional electrical subgroups for

Group C periodic inspections

None

10, 11

Group D end point electrical parameters

1, 2, 3

*PDA applies to subgroup 1.

4.4 Technology Conformance Inspection (TCI). Technology conformance inspection shall be in accordance with

MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, 6, 7, and 8, shall be omitted.

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End point electrical parameters shall be as specified in table II herein.

b. Subgroups 3 and 4 shall be added to the group C inspection requirements for class B devices and shall consist of the tests, conditions, and limits specified for subgroups 10 and 11 of group A. The sample size series number shall be 5 (45 devices accept on 0).

c. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein.