MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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INCH-POUND MIL-M-38510/209H

21 April 2014

SUPERSEDING MIL-M-38510/209G

13 September 2013

MILITARY SPECIFICATION

MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON

Inactive for new design after 24 July 1995

This specification is approved for use by all Departments and Agencies of the Department of Defense.

The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535.

1.  SCOPE

1.1  Scope.  This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element.  Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.  For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).

1.2  Part or Identifying Number (PIN).  The PIN is in accordance with MIL-PRF-38535, and as specified herein.

1.2.1  Device types.  The device types are as follows:

Device type                                                          Circuit                                                         Access time (ns)

01               2048 word / 4 bits per word PROM with uncommitted collector                             125

2048 word / 4 bits per word PROM with active pullup and a third high-

impedance state output                                                                                    125, 90, 55

03               1024 word / 8 bits per word PROM with uncommitted collector                              90

1024 word / 8 bits per word PROM with active pullup and a third high-

impedance state output                                                                                        90, 55

1024 word / 8 bits per word PROM with active pullup and a third high-

impedance state output                                                                                           90

06               1024 word / 8 bits per word PROM with uncommitted collector                              90

NOTE:           Device type 07 was deleted from this document under revision D.

1.2.2  Device class.  The device class is  the product assurance level as defined in MIL-PRF-38535.

Comments, suggestions, or questions on this document should be addressed to:  Commander, Defense Supply Center Columbus, ATTN: DLA Land and Maritime-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to memory@dla.mil.  Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil

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